Design rules for library TSMC 0.18U CMOS 018 DEEP (6M, HV FET, S block)

Hello all,

Normally the thumb rule followed in the 0.6u technology for the difusion length of an NMOS transistor is 3um+gate length. What is the thumb rule followed for diffusion length in TSMC 0.18u?
I am new to drawing of layouts using the TSMC 0.18U CMOS 018 DEEP (6M, HV FET, S block). previously i had been using 0.6u technology. where can i find the design rules for this TSMC 0.18u.


Please help me.



Thanks in advance